Radiation blistering of Nb Implanted sequentially with helium ions of different energies (3–500 keV)

Blistering of H-implanted GaN

Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: ~i! ion energy ~from 20 to 150 keV!, ~ii! ion dose ~up to 1.2310 cm!, ~iii! implantation temperature ~from 2196 to 250 °C!, and ~iv! annealing temperature ~up to 900 °C!. Results show that both the onset of blistering ...

Effect of Annealing on Microstructures and Hardening of Helium-Hydrogen-Implanted Sequentially Vanadium Alloys

The effect of post-irradiation annealing on the microstructures and mechanical properties of V-4Cr-4Ti alloys was studied. Helium-hydrogen-irradiated sequentially V-4Cr-4Ti alloys at room temperature (RT) were undergone post-irradiation annealing at 450 °C over periods of up to 30 h. These samples were carried out by high-resolution transmission electron microscopy (HRTEM) observation and nanoi...

Evaluation of Thyroid Gland Irradiation in Women with Breast Cancer during Radiotherapy with different Radiation Energies at Supraclavicular Region

Introduction: During treatment of breast cancer, Radiotherapy to the Supraclavicular fossa region results in absorption of radiation by the thyroid gland and consequently leads to hypothyroidism in 40% of patients. The aim of this study was to compare thyroid gland radiation absorption during radiotherapy with different anterior-posterior beam radiation of 6-15 and 15-15 MV pho...

Microstructure of 5 keV gold-implanted polydimethylsiloxane

Microstructural evolution of helium-implanted a-SiC

Helium has a decisive effect on the microstructure of silicon carbide materials after implantation and subsequent annealing. A dense population of bubbles and dislocation loops is already observed at relatively low displacement doses after annealing of helium-implanted a-SiC, while no visible damage appears after irradiation without helium implantation under otherwise equal conditions. The defe...